4H-SiC: The Key to Improving Industrial Efficiency


In the previous blog, we have already discussed all aspects of silicon carbide, If you are interested, you can click here to learn more about this product.

In this article, we are going to discover the remarkable world of 4H Silicon Carbide (4H-SiC), a material that stands at the forefront of technological innovation.

Brief Introduction to Silicon Carbide (SiC)

Silicon carbide is one of the ceramic materials which composed of silicon and carbon. Due to its unique properties, silicon carbide is widely used in the applications of abrasives, functional ceramic, and refractory and so on.

silicon carbide particles

Overview of the Different Polytypes of SiC

Different from other substances, SiC exists in multiple crystal structures known as polytypes. Different stacking sequences in the crystal lattice lead to the polytypes of SiC.

Let take an overview of the key polytypes of SiC.

3C- SiC4h-sic

6h- sic15r-sic






Cubic structure

good electronic properties; higher mobility of electrons

high-frequency devices;electronics


Hexagonal crystal structure with a repeating sequence of four layers.

wide bandgap;high electric field breakdown strength

electric vehicles;diodes;transistors;power grids;renewable energy systems


Hexagonal crystal structure with a six-layer repeat sequence.

Similar to 4H-SiC but with slightly lower electron mobility and thermal conductivity

power electronic devices;substrates


Rhombohedral crystal structure with a 15-layer repeat sequence

Shares many properties with the hexagonal polytypes but is less common due to its more complex crystal structure.

studying the effects of crystal structure

Understanding 4H-SiC

4H-SiC, or 4h silicon carbide, which has the hexagonal crystal structure with a repeating sequence of four layers.

What the physical and chemical properties of this crystal structure?



Physical Properties

Chemical Properties

Electronic Properties

Wide Bandgap

Chemical Inertness

High Electric Field Breakdown Strength

High Thermal Conductivity;High Electron Mobility;High Hardness and Mechanical Strength

Resistance to High-Temperature Oxidation

Low Intrinsic Carrier Concentration

Comparison Between 4H-SiC and 6H-SiC

4h- sic vs 6h-sic




Crystal Structure




3.2 eV

3.0 eV

Electron Mobility



Thermal Conductivity

higher thermal conductivity

high thermal conductivity



Schottky diodes, MOSFETs, and power modules for electric vehicles, renewable energy systems, and power grid infrastructure

used in some specific electronic components and as substrates for growing other SiC polytypes

In conclusion, compared to other SiC polytypes such as 6H-SiC, 4H-SiC exhibits superior thermal conductivity, a larger bandgap, and higher electron mobility.

4H-SiC is more suited for high-power and high-frequency electronic devices because of these characteristics.

Applications of 4H-SiC

  • Power electronics and devices: power converters and inverters
  • RF (Radio Frequency) devices: wideband communications; high-frequency operation
  • LED technology: high-power LED lighting; integrated LED drivers
  • Aerospace and defense: high-temperature electronics; robust sensors for harsh environments; optical components


As we’ve seen, 4H-SiC is crucial to the development of several technologies, from enhancing electronic device power efficiency to opening up new possibilities in aerospace and defense.

Are you prepared to learn more about 4H-SiC and how it can revolutionize your field of study or industry? Get in touch with us to learn more, be informed about the most recent advancements, and discover how our 4H-SiC experience may help you realize your full potential.

Select the appropriate product for your industrial use and leave us a message.


What is the significance of 4H-SiC in semiconductor technology?

Because 4H-SiC can function at high temperatures, voltages, and frequencies, which sets it apart from typical silicon in power electronic devices, it is significant in semiconductor technology.

How is 4H-SiC produced?

Chemical vapor deposition (CVD) is the method used to create 4H-SiC. In this technique, gaseous silicon and carbon compounds react at high temperatures to generate the SiC crystal. Epitaxial growth and substrate preparation are essential processes for producing 4H-SiC wafers of superior quality.

What makes 4H-SiC the preferred semiconductor material over others?

Because of its improved heat conductivity, which permits devices to function at greater temperatures, its high breakdown voltage, which permits high-power applications, and its radiation resistance, which qualifies it for space applications, 4H-SiC is favored over other material.

Why should you use our 4H-SiC-based product?

Owing to 4H-SiC’s special qualities, adopting it has several advantages for consumers, including less energy loss, less cooling need, higher system efficiency, and longer lifespan. These advantages also result in cost savings and sustainability.

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